MARIFY3357(S58)

The chip is made by silicon epitaxy technology, which has the characteristics of high power gain amplification, wide band, low noise, low leakage current, small sum capacitance, large dynamic range and ideal current linearity; It is mainly used in UHF microwave, high frequency broadband and low noise amplifier, such as CATV video amplifier, wireless transceiver module, all kinds of remote control, security alarm, analog digital cordless telephone and other products, suitable for medium power and high frequency signal amplification; Collector Emitter Breakdown Voltage: BVCEO = 15V, maximum collector current: ICM = 100mA, collector dissipation power: PC = 1000MW, characteristic frequency: ft = 8.5ghz; Package form: sot89, marking: S58.

MARIFY3356(R25)180-250

It has the characteristics of high power gain amplification, low noise, large dynamic range and ideal current linearity; It is mainly used in UHF microwave radio frequency amplification, VHF, UHF and CATV high frequency broadband low noise amplifier, wireless remote control In circuits such as RF module, radar inductive switch, etc; Collector Emitter Breakdown Voltage: BVCEO ≥ 12V, maximum collector current: IC ≥ 100mA, collector power: PC ≥ 200MW (SOT-323 package PC ≥ 150MW), characteristic frequency: ft = 7.5ghz; Package form: sc59, SOT23 or SOT323, body print: R25; 180-250